Atomic Layer Deposition (ALD) reactors (2)

Atomic layer deposition (ALD) reactors for the deposition

of oxide and nitride thin films, including A_l2O₃, La₂O₃, Ta₂O₃,

ZnO, TiO₂, TiN, AlN, TaN

 Doping, protective coating, functional surface buildup, thin film processing

 Manual load lock for fast single wafer processing. Flexible reactor configuration allows processing of large 3D objects. Plasma source available for low temperature deposition. Reactors installed in cleanroom.

Free vacuum chamber volume 500 x 500 mm (ø x L)

    - Precursor sources, max 4 gas (incl. ozone), 4 liquid, 2 hot (max 500°C)

    - Deposition temperature, max 500°C

    - Deposition pressure typically < 20 mbar (optionally up to 1000 mbar)

    - Main dimensions 1600 x 900 x 1930 mm (L x W x H)

    - Connection power 10 kW