Plasma Enhanced Chemical Vapour Deposition (PECVD)

Organisaatiot: Aalto-yliopiston teknillinen korkeakoulu (TKK) » Elektroniikan, tietoliikenteen ja automaation tiedekunta » TKK Micronova

Oxford Plasmalab 80 Plus

Victor Ovchinnikov

2002

2003

Coating system that uses plasma to enhance chemical reactions

Depositioning of Si, SiO2 and Si3N4 films on substrates

13.56 MHz driven parallel reactor

Wafer diameter                                            Up to 240 mm, optimized for 100 mm

Process gases                                            SiH4, N2O, NH3, N2, He, CH4

Non-uniformity over 100 mm                     <5 %

Working pressure range                             100 - 2000 mTorr

Substrate temperature                                100 - 380°C

RF power                                                        10 - 300 W

Typical deposition rate of:     α-Si               9 nm/min

                                                   SiO2              65 nm/min

                                                  Si3N4            25 nm/min
 

Micronova Nanofabrication Centre - cleanroom section F10. Tietotie 3, 02150 Espoo

Espoo

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