Molecular Beam Epitaxy (MBE) System

Organisaatiot: Aalto-yliopiston teknillinen korkeakoulu (TKK) » Elektroniikan, tietoliikenteen ja automaation tiedekunta » TKK Micronova

VG Semicon

Sergey Novikov

1987

1987

Controlled thermal evaporation process under ultrahigh vacuum

Growing layers on substrate's surface

Extremely accurate layer thickness control

V-80H chamber 

    - type of molecular sources - 10, 30 and 200cc Knudsen cells

    - maximum amount of cells - 8

    - loaded elements - Ga, Mn, As, Si, Be, Zn, Se

    - Maximum substrate size 76 mm dia.

    - Maximum substrate temperature - 800°C

    - Base pressure 5x10-11torr

    - 15kV electron gun and screen for structural monitoring (RHEED)

 

V-80M chamber 

    - type of molecular sources - three 30 cc Knudsen cells, two 8kW E-beam evaporators, RF-plasma cell

    - loaded materials - Ge, Sb, B2O3 in Knudsen cells, Si, Sn, SnO2, SiO, Mo in E-beam evaporators

    - available gases for RF plasma cell - O2, H2, N2, Xe

    - maximum substrate size 76 mm dia.

    - maximum substrate temperature 900°C. Heater is resistant to oxygen ambient

    - base pressure 1x10-10torr

    - 15kV electron gun and screen for structural monitoring (RHEED)

Micronova Nanofabrication Centre - MBE lab room 1020. Tietotie 3, 02150 Espoo

Espoo

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