Electron Beam Lithography

Organisaatiot: Itä-Suomen yliopisto » Fysiikan ja matematiikan laitos (Joensuu)

Vistec EBPG5000+ES HR

Pertti Pääkkönen

2006

2006

Modern Gaussian shaped electron beam patterning tool with nanometer scale patterning accuracy.

Nanostructure patterning on e-beam resist.

Electron beam pattern generator with 50 kV or 100 kV energy, 5 nm spot size and 6” x 6” laser interferometric controlled XY stage. Alignment microscope for precise alignment of samples.

FilamentThermal Field Emission Gun
Beam energy
50 kV or 100 kV
Beam current
100 pA - 100 nA
Beam size
6 nm @ 50 kV
 5 nm @ 100 kV
Resolution
10 nm linewidth
Patterning area 155 mm x 155 mm
Stage interferometric resolution
0,618
Scan field distortion
<16 nm over 800 µm @ 50 kV
 <11 nm over 500 µm @ 100 kV
Stitching accuracy
<60 nm over 800 µm @ 50 kV
 <29 nm over 500 µm @ 100 kV
Overlay accuracy
<31 nm over 800 µm @ 50 kV
 <53 nm over 500 µm @ 100 kV
Orthogonality
0,8 µrad
  

Joensuu

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