Dual Focused Beam System, FEI HELIOS
Nikolai Chekurov
Substrate Size: Up to 6” wafers, also small (down to 1x1 mm ) chips are possible. The maximum height of the sample is ca. 1 cm. Allowed Materials: All non-magnetic materials Forbidden Materials: Magnetic materials Availability and Cost: Availability Class: F (Use allowed for all researchers with permission.) Price Category: Special
2007
2007
Dual beam microscope combines high quality scanning electron microscope and a focused ion beam microscope. The ion (Ga) beam can be used for milling and both the beams for the deposition.
• Both beams can be used at the same time, providing real-time image of a milled structures. The machine is designed to create quick and accurate cross-sections and there is a possibility to make TEM samples.
• The milling speed is depended on the accuracy and at it's maximum is in the range of 1 um^3/s.
• There are three gas injection systems installed: Pt deposition, dielectric deposition and silicon etching gas.
• The machine is also equipped with a nanomanipulator. Possibility to make electron beam litography.
• Acceleration Voltage: Electron 1kV...30kV, Ion 1kV...30kV
• Resolution: Electron, 0.8 nm @ 15 kV, 1.5 nm @ 1 kV, Ion, 5nm @ 30kV
• Ion beam current: Ion 1,5pA ... 21nA
• Writefield: ca. 700 x 700 um2