Plasma Reactor, TEPLA

Nimi ja malli: Plasma Reactor, TEPLA

Yhteyshenkilö: Victor Ovchinnikov
victor.ovchinnikov(at)tkk.fi    +358 9 470 24988

Valmistusvuosi: 1999

Asennusvuosi: 2005

Laitteen yleiskuvaus:

Substrate Size:

Up to 200 mm

Allowed Materials:

Solid substrates.

Forbidden Materials:

Conductive materials.

Availability and Cost:

Availability Class: F (Use allowed for all researchers with permission.)
Price Category: Medium

Käyttö: The system for soft (no ion bombardment) isotropic dry etching. It is good choice for photoresist stripping and plasma surface activation. Manual sample loading and computer assisted process running.

Tärkeimmät ominaisuudet ja lisävarusteet: The system consists of microwave (MW) reactor with manually regulated working pressure. Flow rate of process gases is tuned by mass flow controllers. Any recipe may include five process steps. Photo sensor for plasma detection.

Tärkeimmät spesifikaatiot:

Max MW power (2.45 GHz)	1000 W
Max process step duration	99 min
Process gases	O2, Ar, N2, CF4
Max working pressure	4.5 mbar
Photoresist stripping rate	8 nm/min (O2/Ar)
	200 nm/min (O2/CF4)

Valokuva:

Sijainti: Micronova Nanofabrication Centre - Nanofab F10 (service area) - Tietotie 3, 02150 Espoo

Kaupunki: Espoo