E-beam Lithography Tool / SEM

Name and Model: Raith E-line

Contact Person: Antti Nuottajärvi
nuanka@jyu.fi +358503956002

Year of Manufacture: 2005

Year of Installation: 2005

General Technical Information:

Ultra high resolution electron beam lithography and nano-engineering workstation

Desrcription of Use:

Nanostructures patterning on e-beam resists. Imaging.

Key Features and Accessories:

45 mm laser interferometer precision stage, High beam current density, Fast electrostatic beam blanking, closed loop piezo control for fine sample positioning, 2 nm XY position resolution at any WD, WF size and SEM magnification. Writefields from 0.5 µm to 2 mm with automated calibration and selection. 10 MHz high speed pattern processor. Height sensing. Load lock for quick access.

Key Specifications:

Filament                                       Schottky TFE
Beam size                                    1.8 nm @ 20keV
                                                        3.5 nm @ 1 keV
Beam current range                   5 pA - 20 nA
Beam energy                               100 eV - 30 keV
Current stability                            below 1.2% in 11 hrs
Minimum feature size                 18.2 nm line (acceptance test)
Minimum grating periodicity       73 nm period with 32.4 nm line
Stitching accuracy                        |mean|+3σ = 35.5 nm, 100µm write field, 10 keV
Overlay accuracy                          |mean|+3σ = 39.0 nm
Height sensing reproducibility  0.74 µm

Photograph:

Location: University of Jyväskylä, Nanoscience Center, Cleanroom Lithography section YN010.6.
Survontie 9, 40500 Jyväskylä

City: Jyväskylä