Name and Model: Beneq TFS 500 ALD
Contact Person: Markus Bosund
Year of Manufacture: 2005/2006
Year of Installation: 2006/2006
General Technical Information:
Atomic layer deposition (ALD) reactors for the deposition
of oxide and nitride thin films, including Al2O3, La2O3, Ta2O3,
ZnO, TiO2, TiN, AlN, TaN
Desrcription of Use:
Doping, protective coating, functional surface buildup, thin film processing
Key Features and Accessories:
Manual load lock for fast single wafer processing. Flexible reactor configuration allows processing of large 3D objects. Plasma source available for low temperature deposition. Reactors installed in cleanroom.
Key Specifications:
Free vacuum chamber volume 500 x 500 mm (ø x L)
- Precursor sources, max 4 gas (incl. ozone), 4 liquid, 2 hot (max 500°C)
- Deposition temperature, max 500°C
- Deposition pressure typically < 20 mbar (optionally up to 1000 mbar)
- Main dimensions 1600 x 900 x 1930 mm (L x W x H)
- Connection power 10 kW
Photograph:
Location: Micronova Nanofabrication Centre - cleanroom section F9. Tietotie 3, 02150 Espoo
City: Espoo
Additional information:
Booking: http://www.micronova.fi/booking
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