Laser ablation deposition device

Name and Model: ColdabTM

Contact Person: Reijo Lappalainen

Year of Manufacture: 2007

Year of Installation: 2007

General Technical Information:

Desrcription of Use: This research instrument is especilly useful to demonstrate the feasibility of ColdabTM technique for commercial applications of many novel thin films, coatings and nanostructures grown from plasma. Materials include oxides, nitrides, diamond, carbon nitride (C3N4), semiconductors (Si, GaAs, compound semiconductors etc.), ITO, natural materials (stone, gelatin, chitin, etc.).

Key Features and Accessories:

Very flexible deposition system for almost any material on any solid material, even heat sensitive substrates like polymers or patterned lithography. Setup is suitable for depositing very well-controlled nanoparticles on surfaces.

For more information:

www.picodeon.com 

Key Specifications:

Sample size: typical upto 250 mm x 250 mm plates 

Laser specs:

Average power of laser: 20 W (upgradeable)

Repetition rate: 1-4 MHz (later up to 30 MHz)

Wavelength: 1064 nm

Scanning speed: 1-300 m/s

Vacuum chamber: 10^-6mbar (base pressure), 10^-1-10^-5mbar (during deposition), control of reactive and inert gases.

Photograph:

Location: Dept. of Physics (Panos)
Yliopistonranta 1 R

City: Kuopio