Advanced Vacuum Vision 320 Mk II
Tomi Ryynänen
2007
2008
Reactive ion etcher (RIE).
Isotropic and directional dry etching (Si, SiO2, Si3N4, glass, polymers, metals (limited performance) etc.) and oxygen plasma cleaning.
Windows based user interface, open load chamber, fluorine chemistry, additional viewport for installing end point detector.
Electrode plate diameter: 280-305 mm
Max substrate diameter: 10”-12”
Gases: CF4, CHF3, SF6, O2, Ar
RF supply: 600 W, 13.56 MHz
Temperature controlled lower electrode: +5 - +45 deg C
Process chamber material: Aluminium
Wafer platen material: Ceramic
Tampere University of Technology, Sähkötalo building, ASE cleanroom, Se209a.
Tampere