Mask aligner

Organization: Tampere University of Technology » Department of Automation Science and Engineeering

Karl Suss MJB 3

Tomi Ryynänen

???

2005

Manual mask aligner

Mask alignment and contact exposure in photolithography process.

Alignment to x, y and θ directions, microscope for accurate alignment, backside alignment option (never used).

Optics: UV300 280 – 350 nm
Light source: 350W mercury lamp
Wafer size:  up to 3” Ø
Substrate size: up to 3” x 3”
Wafer / substrate thickness: 0 – 4.5 mm
Mask size: up to 4” x 4”
Resolution: ~1 µm
Available photoresists: ma-P 1200, SU-8

Tampere University of Technology, Sähkötalo building, ASE cleanroom, Se209a.

Tampere

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