PECVD and RIE Device

Name and Model: Oxford Instruments Plasmalab 80 Plus Dual

Contact Person: Hannu Moilanen

Year of Manufacture: 2005

Year of Installation: 2006

General Technical Information: Linked dual chamber configuration: Plasma Enhanced Chemical Vapor Deposition (PECVD) and Reactive Ion Etcher (RIE) with Inductively Coupled Plasma (ICP)

Desrcription of Use: Thin film deposition by PECVD (SiO₂, SiN_x etc.).  Dry ething with RIE. Silicon, silicon nitride, silicon dioxide, thin film metalization etching.

Key Features and Accessories:

PECVD key features: Top electrode RF driven (13.56 MHz); no RF bias on lower (substrate) electrode. Substrate sits directly on heated electrode. Gas injected into process chamber via “showerhead” gas inlet in the top electrode.

RIE key features: Gas injected into process chamber via “showerhead” gas inlet in the top electrode. Negative self-bias forms on lower electrode. Single RF plasma source determines both ion density and energy. Substrate is usually placed on a quartz or graphite “coverplate” to avoid sputtering/re-deposition of electrode material. Helium-assisted substrate backside cooling. Separate RF generators for ICP and electrode provide separate control over ion energy and ion density.

Key Specifications: Operating pressure:
PECVD: 0.5-1.0 Torr
RIE: 5-500 mTorr
Power range:
0 -300 W (13.56MHz)
Power density:
0.02-0.1 W/cm2
Process temperature range:
PECVD: upto  400 °C
RIE: from -20 °C with Helium-assisted cooling up to 300 °C
Process gas conficurations:
PECVD: SiH₄, NH₃, N₂O, CF₄
RIE: Cl₂, CHF₃, SF₆, O₂, Ar
Wafer size:
PECVD: 150 mm (diameter)
RIE: 100 mm (diameter)
Sysytem control:
Windows XP, PC 2000 control software

Photograph:

Location: University of Oulu, Center of Microscopy and Nanotechnology, Cleanroom

City: Oulu