Suss MicroTec MA6
Hannu Moilanen
2001
2006
Manual high precision mask aligner with UV source
Device is used for mask aligning and exposing photoresist with UV light
Manual mask alignment. Top side alignment microscope with dual video camera. Accurate and precise gap setting for higher yield. High-quality, diffraction reduction exposure optics for high resolution. Optimum edge quality with thick resist. Processing of fragile wafers and pieces. High intensity UV-light source reduce process times. For wafers from 2” to 4" (100 mm) (substrates from 2”x2” to 4”x4”). Pieces down to a few millimeters.
Wafer Size:
up to 4" (100mm)
Substrate Size:
up to 4"x4"
Pieces:
down to <5x5mm
Mask Size:
SEMI spec, standard 4"x4" or 5"x5"
Exposure Modes
Contact:
soft, hard, low vacuum, vacuum
Proximity:
exposure gap 1–300μm
Gap Setting Accuracy:
1μm
Vacuum Contact:
adjustable to 200mbar abs
Exposure Optics
Resolution:
down to 0.5μm
Wavelength Range:
UV400 350–450nm
Exposure Source:
350W Hg lamp
Intensity Uniformity:
±5%
Alignment Stage
Alignment Method:
Top Side Alignment (TSA)
Accuracy:
down to 0.8 μm
Movement Range:
X: ±10mm, Y: ±5mm, Ө: ±5°
Mechanical Accuracy:
0.1μm (step size)
TSA Microscope Stage
Single Field:
X: ±25mm; Y: +25 to -75mm
Split Field:
X: ±25mm; Y: +15 to -75mm; Ө: ±3°