Name and Model: Oxford Plasmalab 80 Plus
Contact Person: Victor Ovchinnikov
Year of Manufacture: 2002
Year of Installation: 2003
General Technical Information: Coating system that uses plasma to enhance chemical reactions
Desrcription of Use: Depositioning of Si, SiO2 and Si3N4 films on substrates
Key Features and Accessories: 13.56 MHz driven parallel reactor
Key Specifications:
Wafer diameter Up to 240 mm, optimized for 100 mm
Process gases SiH4, N2O, NH3, N2, He, CH4
Non-uniformity over 100 mm <5 %
Working pressure range 100 - 2000 mTorr
Substrate temperature 100 - 380°C
RF power 10 - 300 W
Typical deposition rate of: α-Si 9 nm/min
SiO2 65 nm/min
Photograph:
Location: Micronova Nanofabrication Centre - cleanroom section F10. Tietotie 3, 02150 Espoo
City: Espoo
Additional information:
Booking: http://www.micronova.fi/booking
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