Flow-type ALD reactor (6 reactors)

Name and Model: F-120 (ASM Microchemistry Ltd., Finland)

Contact Person: Mikko Ritala
http://www.helsinki.fi/kemia/epaorgaaninen/index.htm (Laboratory of Inorganic Chemistry)

Year of Manufacture: 1988-1995

Year of Installation: 1991-2007

General Technical Information: Flow-type atomic layer deposition reactor.

Desrcription of Use: Atomic layer deposition of uniform, conformal thin films for various applications with atomic layer accuracy. Template-directed preparation of micro and nanostructures, for example nanotubes. One of the reactors is equipped with a QCM/QMS setup for studies on ALD reaction mechanisms.

Key Features and Accessories: Various insulating, semiconducting and conducting materials, including several types of oxides, noble metals, nitrides, sulfides and fluorides can be deposited. Liquid, solid and gaseous precursors can be used.

Key Specifications: Maximum deposition  temperature:   500 C

Photograph:

Location: University of Helsinki, Department of Chemistry, Laboratory of Inorganic Chemistry

City: Helsinki