Reactive Ion Etching

Organization: University of Joensuu » Department of Physics and Mathematics

Oxford Instruments Plasmalab System 100

Pertti Pääkkönen

1999

2004

Reactive Ion Etching tool with Inductive Coupled Plasma (ICP) Source.

Etching of micro and nanostructures on quartz and metals.

Reactive Ion Etching tool with Inductive Coupled Plasma source, helium backside cooling.

Electrode diameter 205 mm
ICP unit diameter
380 mm
Plasma generation
13,56 MHz, 300 W
ICP source
5 kW
Process gases
O2, Ar, CHF3, SF4, CF6, He, Cl, BCl3
  

Joensu

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