Kulicke & Soffa 4523
Hannu Moilanen
2008
2008
Device for making electrical connections between microelectronic components and their packages
Both wire and ribbon bonding can be carried out. The compressive force can be carefully controlled which enables also processing of brittle materials like GaAs and other compound semiconductors. Thick ribbons can be used in bonding, which makes it possible to join also components of power electronics.
Bonding method: ultrasonic and thermocompression
Adjustable compressive force, time, temperature, and power
Wire: 18-75 µm gold and aluminum wires
Ribbon: 25-500 µm gold ribbon