Ion Implanter, EATON
Victor Ovchinnikov
victor.ovchinnikov(at)tkk.fi +358 9 470 24988
1992
2002
Substrate Size:
Thickness up to 1 mm.
Allowed Materials:
Semiconductors .
Forbidden Materials:
Sticky, powder and liquid materials.
Availability and Cost:
Availability Class: (Use allowed only for operator.)
Price Category: Special
High-performance ion implantation system for precise doping of semiconductors. The system has load lock for cassette wafer loading. Implantation is automated.
The implanter includes ion source, separation magnet, linear accelerator and the control system. Implantation is done in large vacuum chamber with two cryo pumps and one diffusion pump. Water cooled substrate holder.
| Ion energy | 20 - 200 keV |
| Beam current | Up to 500 µA |
| Ions | Ar+, B+, P+ |
| Ion dose | 1x10^12 - 1x10^16 cm-2 |
| Implantation time (1x1016 cm-2) | 30 min |