Plasma Reactor, TEPLA

Name and Model: Plasma Reactor, TEPLA

Contact Person: Victor Ovchinnikov
victor.ovchinnikov(at)tkk.fi    +358 9 470 24988

Year of Manufacture: 1999

Year of Installation: 2005

General Technical Information:

Substrate Size:

Up to 200 mm

Allowed Materials:

Solid substrates.

Forbidden Materials:

Conductive materials.

Availability and Cost:

Availability Class: F (Use allowed for all researchers with permission.)
Price Category: Medium

Desrcription of Use: The system for soft (no ion bombardment) isotropic dry etching. It is good choice for photoresist stripping and plasma surface activation. Manual sample loading and computer assisted process running.

Key Features and Accessories: The system consists of microwave (MW) reactor with manually regulated working pressure. Flow rate of process gases is tuned by mass flow controllers. Any recipe may include five process steps. Photo sensor for plasma detection.

Key Specifications:

Max MW power (2.45 GHz)	1000 W
Max process step duration	99 min
Process gases	O2, Ar, N2, CF4
Max working pressure	4.5 mbar
Photoresist stripping rate	8 nm/min (O2/Ar)
	200 nm/min (O2/CF4)

Photograph:

Location: Micronova Nanofabrication Centre - Nanofab F10 (service area) - Tietotie 3, 02150 Espoo

City: Espoo