Reactive Ion Etcher, Plasmalab 80

Name and Model: Reactive Ion Etcher, Plasmalab 80

Contact Person: Victor Ovchinnikov
victor.ovchinnikov(at)tkk.fi +358 9 470 24988

Year of Manufacture: 2002

Year of Installation: 2003

General Technical Information:

Substrate Size:

Up to 240 mm, optimized for 100 mm

Allowed Materials:

Si, SiO2, Si3N4, some metals, semiconductors and glasses (ask main user).

Forbidden Materials:

Some metals and semiconductors (ask main user). Sticky, powder and liquid materials.

Availability and Cost:

Availability Class: F (Use allowed for all researchers with permission.)
Price Category: High

Desrcription of Use: Reactive Ion Etching (RIE) system with F-based chemistry. A semiautomatic system with manual sample loading. Etching process is automated.

Key Features and Accessories: A 13.56 MHz driven parallel plate reactor with water cooled graphite substrate electrode and automatic matching unit between RF generator and the reactor. Process gases are SF6, CF4, O2, Ar and CHF3. The system has a turbomolecular pump to maintain high vacuum during processing.

Key Specifications: Key_specifications

Non-uniformity over 100 mm	< 2 %
Working pressure range	5 - 250 mTorr
RF power	20 – 250 W
Typical etch rate of:	Si	300 nm/min
	SiO2	40 nm/min
	Si3N4	60 nm/min

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