Beneq TFS-500
Tommi Kääriäinen
tommi.kaariainen@lut.fi+358 40 081 3473
2005/2006
2006
TFS-500 is an ALD reactor for thin film deposition. The design allows the deposition on wafers up to 200 mm, solid/porous 3D objects and powder substance. The reactor is suitable for doping, protective coating, functional surface build-up and thin film processing.
Deposition temperature range 25...500 ºC.
Al2O3
- From room temperature up to 220 ºC.
- Deposition on temperature sensitive materials such as polymers.
- Protective barrier films on polymers and ceramics.
- Intermediate adhesion layers for metallization
- Insulating layers on metals
TiO2 and Nitrogen doped TiO2,
- From room temperature up to 350 ºC
- Deposition on temperature sensitive materials such as polymers
- Crystallinity control of TiO2
- Protective barrier films on polymers
- Surface functionalization
Other oxides: ZrO2, SiO2
Nitrides: TiN, AlN
Carbides: TiC, TiCN
Precursor sources
Reactor design allows deposition of various film materials using the liguid, solid and gas precursors.
- Liguid sources (4) - 5...25 ºC
- Hot solid source - up to 500 ºC
- Hot liquid source - Liguid precursors can be vaporized at elevated temperature up to 200 ºC.
- Gas sources (3)
Plasma reactor
- Allows deposition down to room temperature.
- Plasma is generated by capacitive coupling directly in the deposition chamber.
- Plasma is separated from the substrate by a grid
- Plasma insitu pre- and post-treatments
- Equipped with Optical Emission Spectroscopy (OES)
General
- Dimensions 1600 mm x 900 mm x 1930 mm (L x W x H)
- Connecting power Typically 10 kW
Vacuum chamber
- Outer dimensions 600 mm x 600 mm
- Internal free volume 500 mm x 500 mm.
- Operating temperature range 25...500 ºC