Reactive Ion etcher (RIE)

Name and Model: Oxford Plasma Technology Reactive Ion Etching System 100

Contact Person: Jukka Viheriälä

Year of Manufacture: 1999

Year of Installation: 1999

General Technical Information: Reactive ion etcher for dry etching of V-III semiconductors and dielectrics.

Desrcription of Use: Etching of materials with plasma in chamber. Dry etching.

Key Features and Accessories: Equipped with a laser interferometer (670 nm) for end-point detection. Gases: Argon, Oxygen, Silicon tetrachloride, Hydrogen, Chlorine, Freon R14 (CF4), Freon R23 (CHF3). System will be updated to (Q3-Q4 2008) to have following gases: Argon, Oxygen,  Hydrogen, Sulfur hexafluoride (SF6), Freon R23 (CHF3)

Key Specifications: 12. Key Specifications/ Tärkeimmät spesifikaatiot:
• 13.56 MHz driven parallel plate reactor  / rinnakkais levyelektrodireaktori
• cooled substrate electrodes  / vesijäähdytteinen alaelektrodi
• shower head gas inlet optimised for RIE / RIE:tä varten optimoitu kaasun syöttösuihkutin
• process pressure / prosessipaine: 1 - 100 mtorr
• plasma density / plasmatiheys: ~1 - 5 x 109 / cm2
• max RF power / maksimi RF teho: 300W
• gas ports / kaasuportteja: 6 
• max gas flow / maksimi kaasuvirtaus: 100 sccm
• end point detection / etsaussyvyyden monitorointi : optical interferometer / optinen interferometri

Photograph:

Location: Tampere University of Technology, Optoelectronics Research Centre, Korkeakoulunkatu 3,33720 Tampere, Finland Room Sk215A (Cleanroom)

City: Tampere