Plasma Enchanced Chemical Vapour Deposition (PECVD)

Name and Model: OPT Plasmalab80Plus

Contact Person: Jukka Viheriälä

Year of Manufacture: 2002

Year of Installation: 2002

General Technical Information: High quality PECVD system for deposition of silicon dioxide and silicon nitride.

Desrcription of Use: Isotropic growth of dielectric layers on semiconductors for isolation and nanoscale patterning.

Key Features and Accessories: 240 mm plate electrode with adjustable table temperature, highly isotropic layer growth 13.56 MHz RF source for plasma generation, automatic pressure controller, turbo pumped with roots back pump, Pneumatic hoist mechanism for easy loading of samples, 6-line gas pod with mass flow controllers for each line. PC2000 Software for easy use.

Key Specifications: Grown materials:   SiN, SiO2
Typical growth rate:   ~1,2 nm/s for SiO2, ~0,35 nm/s for SiN
Used gases:    N2, N2O, NH3, SiH4 / N2. CF4 / O2 for cleaning
Maximum gas flow:   depending on the gas, between 50-1000 sccm
Table temperature:    20-400 °C
Table electrode diameter:   240 mm
Sample loading time:   ~2 min
Chamber pressure:    <2-1000 mTorr
Maximum RF power:   300 W
Growth uniformity:   <2% over 3’ wafer

Photograph:

Location: Tampere University of Technology, Optoelectronics Research Centre (ORC), Cleanroom SK215A, Korkeakoulunkatu 3, 33101 Tampere

City: Tampere