Electron-beam metal evaporator

Organization: Tampere University of Technology » Optoelectronics Research Centre (ORC)

Instrumentti Mattila E-Beam Evaporator

Jukka Viheriälä

2004

2004

Electron-beam metal evaporator.

Evaporation of thin metal layers for electrical contacts and etch masks.

Telemark e-beam source, Cryopump for HV and fast pumping, Cold cathode pressure monitor, accurate thickness monitoring during evaporation with a quartz crystal, water-cooled chamber, adjustable e-beam shape, 8 crucible slots for materials, port valve for separating the vacuum chamber during sample loading, highly anisotropic layer growth, tilting of the sample to any angle during the growth.

E-beam voltage:   4kV to 10 kV
Emission current:  Up to 1 Amp @ 10 kV
Chamber pressure:  In the range of 10-7 mBar
Evaporated materials: Ag, Al, Au, Cr, Ge, Ni, Pt, Ti (Possibility for other materials must be evaluated case by case)
Growth rate:   Typically 0,1 – 2,0 nm/s
Layer thickness : Normally between 5-500 nm
Typical sample size:  Below 76 mm in diameter

Tampere University of Technology, Optoelectronics Research Centre (ORC), Cleanroom SK215B, Korkeakoulunkatu 3, 33720 Tampere

Tampere

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