Inductively coupled plasma etcher ICP

Name and Model: Oxford Plasma Technology Reactive Ion Etching System 100

Contact Person: Jukka Viheriälä

Year of Manufacture: 2008

Year of Installation: 2008

General Technical Information: Inductively coupled plasma etcher for dry etching of V-III semiconductors and metals.

Desrcription of Use: Etching of materials with plasma in chamber. Plasma density can be controlled by ICP power. Dry etching.

Key Features and Accessories: Equipped with a laser interferometer (670 nm) for end-point detection. Gases: SiCl4, BCl3, Cl2, SF6, O2, N2, Ar and He.

Key Specifications: • 13,56 MHz RF generator / generaattori
• max RF power / teho 300 Watt
• max ICP power / teho 3000W
• pressure range / prosessipaine1-500 mtorr
• Temperature range of substrate electrode /  alaelektrodin lämpötilalue-150 - +400 °C
• He backside cooling / Helium substraatin jäähdytys
• Vacuum loadlock / latausluukku
• End Point Detection Laser Interferometry / Etsaussyvyyden monitorointi laserinterferometrillä

Photograph:

Location: Tampere University of Technology, Optoelectronics Research Centre, Korkeakoulunkatu 3,33720 Tampere, Finland Room Sk215B (Cleanroom)

City: Tampere